? semiconductor components industries, llc, 2008 september, 2008 ? rev. 7 1 publication order number: mjh11017/d mjh11017, mjh11019, mjh11021(pnp) mjh11018, mjh11020, mjh11022(npn) preferred device complementary darlington silicon power transistors these devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. features ? high dc current gain @ 10 adc ? h fe = 400 min (all types) ? collector ? emitter sustaining voltage v ceo(sus) = 150 vdc (min) ? mjh11018, 17 = 200 vdc (min) ? mjh11020, 19 = 250 vdc (min) ? mjh11022, 21 ? low collector ? emitter saturation voltage v ce(sat) = 1.2 v (typ) @ i c = 5.0 a = 1.8 v (typ) @ i c = 10 a ? monolithic construction ? pb ? free packages are available* ??????????????????? ??????????????????? maximum ratings ????????????? ????????????? ??? ??? ??? ??? ??? ??? ????????????? ????????????? ????????????? ????????????? collector ? emitter voltage mjh11018, mjh11017 mjh11020, mjh11019 mjh11022, mjh11021 ??? ??? ??? ??? ??? ??? ??? ??? ??? ??? ??? ??? ????????????? ????????????? ????????????? ????????????? ? base voltage mjh11018, mjh11017 mjh11020, mjh11019 mjh11022, mjh11021 ??? ??? ??? ??? ??? ??? ??? ??? ??? ??? ??? ??? ????????????? ????????????? ? base voltage ??? ??? ??? ??? ??? ??? ????????????? ????????????? ? continuous ? peak (note 1) ??? ??? ??? ??? ??? ??? ????????????? ????????????? ??? ??? ??? ??? ??? ??? ????????????? ????????????? ????????????? c derate above 25 c ??? ??? ??? ??? ??? ??? ??? ??? ??? c ????????????? ????????????? ??? ??? ??? ??? 65 to + 150 ??? ??? c ??????????????????? ??????????????????? thermal characteristics ????????????? ????????????? ??? ??? ??? ??? ??? ??? ????????????? ????????????? thermal resistance, junction ? to ? case ??? ??? jc ??? ??? ??? ??? c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. pulse test: pulse width = 5.0 ms, duty cycle 10%. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. preferred devices are recommended choices for future use and best overall value. sot ? 93 (to ? 218) case 340d style 1 15 ampere darlington complementary silicon power transistors 150 ? 250 volts, 150 watts marking diagram http://onsemi.com aywwg mjh110xx a = assembly location y = year ww = work week g=pb ? free package mjh110xx = device code xx = 17, 19, 21, 18, 20, 22 see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information collector 2 base 1 emitter 3 collector 2 base 1 emitter 3 npn pnp mjh11018 mjh11017 mjh11020 mjh11022 mjh11019 mjh11021 3 2 1
mjh11017, mjh11019, mjh11021 (pnp) mjh11018, mjh11020, mjh11022 (npn) http://onsemi.com 2 p d , power dissipation (watts) 160 0 t c , case temperature ( c) 40 60 100 120 160 80 140 20 figure 1. power derating 0 20 40 60 80 100 140 120 ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????????? ??????????????????????? characteristic ???? ???? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? collector ? emitter sustaining voltage (note 2) (i c = 0.1 adc, i b = 0) mjh11017, mjh11018 mjh11019, mjh11020 mjh11021, mjh11022 ???? ???? ???? ???? ??? ??? ??? ??? ???? ???? ???? ???? ? ? ? ??? ??? ??? ??? vdc ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ??? ??? ??? ??? ? ? ? ???? ???? ???? ???? 1.0 1.0 1.0 ??? ??? ??? ??? ??????????????????????? ??????????????????????? ??????????????????????? c) ???? ???? ???? ??? ??? ??? ? ? ???? ???? ???? 0.5 5.0 ??? ??? ??? ??????????????????????? ??????????????????????? ???? ???? ??? ??? ? ???? ???? 2.0 ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics (note 2) ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ??? ??? ??? ??? ???? ???? ???? ???? ? ??? ??? ??? ??? ??????????????????????? ??????????????????????? ??????????????????????? collector ? emitter saturation voltage (i c = 10 adc, i b = 100 ma) (i c = 15 adc, i b = 150 ma) ???? ???? ???? ??? ??? ??? ? ? ???? ???? ???? 2.5 4.0 ??? ??? ??? ??????????????????????? ??????????????????????? ? emitter on voltage (i c = 10 a, v ce = 5.0 vdc) ???? ???? ??? ??? ? ???? ???? 2.8 ??? ??? ??????????????????????? ??????????????????????? ? emitter saturation voltage (i c = 15 adc, i b = 150 ma) ???? ???? ??? ??? ? ???? ???? 3.8 ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????????? ??????????????????????? current ? gain bandwidth product (i c = 10 adc, v ce = 3.0 vdc, f = 1.0 mhz) ???? ???? ??? ??? ???? ???? ? ??? ??? ??????????????????????? ??????????????????????? output capacitance mjh11018, mjh11020, mjh11022 (v cb = 10 vdc, i e = 0, f = 0.1 mhz) mjh11017, mjh11019, mjh11021 ???? ???? ??? ??? ? ? ???? ???? 400 600 ??? ??? ??????????????????????? ??????????????????????? ? signal current gain (i c = 10 adc, v ce = 3.0 vdc, f = 1.0 khz) ???? ???? ??? ??? ???? ???? ? ??? ??? ????????????????????????????????? ????????????????????????????????? switching characteristics ??????????????????????? ??????????????????????? ???? ???? ?????? ?????? ??? ??? ??????????????????????? ??????????????????????? ???? ???? ??? ??? ???? ???? ??? ??? ??????????? ??????????? delay time ????????????? ????????????? ????????????? ????????????? ????????????? ???? ???? ??? ??? ???? ???? ??? ??? ??????????? ??????????? ???? ???? ??? ??? ???? ???? ??? ??? s ??????????? ??????????? ???? ???? ??? ??? ???? ???? ??? ??? s ??????????? ??????????? ???? ???? ??? ??? ???? ???? ??? ??? s 2. pulse test: pulse width = 300 s, duty cycle 2.0%.
mjh11017, mjh11019, mjh11021 (pnp) mjh11018, mjh11020, mjh11022 (npn) http://onsemi.com 3 figure 2. switching times test circuit r b & r c varied to obtain desired current levels d 1 , must be fast recovery types, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma t r , t f 10 ns duty cycle = 1.0% for t d and t r , d 1 is disconnected and v2 = 0 for npn test circuit, reverse diode and voltage polarities. v2 approx +12 v 0 v1 approx -8.0 v v cc 100 v tut scope r b +4.0 v d 1 51 r c 25 s figure 3. thermal response t, time (ms) 1.0 0.01 0.02 0.7 0.2 0.1 0.05 0.02 r(t), effective transient thermal 0.05 1.0 2.0 5.0 10 20 50 100 200 500 r jc (t) = r(t) r jc r jc = 0.83 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.1 0.5 0.2 resistance (normalized) 1000 0.5 0.3 0.07 0.03 0.01 0.03 3.0 30 300 0.3 0.2 0.1 0.05 0.02 0.01 wire bond limit thermal limit second breakdown limit 0.5 ms figure 4. maximum rated forward bias safe operating area (fbsoa) 1.0 ms 5.0 ms 0.1 ms dc v ce , collector-emitter voltage (volts) 2.0 30 2.0 i c , collector current (amps) 3.0 10 10 0.5 0.2 5.0 20 1.0 20 100 0 t c = 25 c single pulse 5.0 50 250 150 30 mjh11017, mjh11018 mjh11019, mjh11020 mjh11021, mjh11022 forward bias there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 4 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 3. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
mjh11017, mjh11019, mjh11021 (pnp) mjh11018, mjh11020, mjh11022 (npn) http://onsemi.com 4 v ce , collector-emitter voltage (volts) 20 30 140 i c , collector current (amps) 60 180 100 10 20 260 220 0 figure 5. maximum rated reverse bias safe operating area (rbsoa) l = 200 h i c /i b1 50 t c = 100 c v be(off) = 0-5.0 v r be = 47 duty cycle = 10% 0 mjh11017, mjh11018 mjh11019, mjh11020 mjh11021, mjh11022 reverse bias for inductive loads, high voltage and high current must be sustained simultaneously during turn ? off, in most cases, with the base to emitter junction reverse biased. under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as reverse bias safe operating area and represents the voltage ? current conditions during reverse biased turn ? off. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. figure 5 gives rbsoa characteristics. t c = 150 c 0 00 0 00 0 00 0 00 0 00 0 00 pnp npn figure 6. dc current gain 0.2 15 3.0 1.0 0.5 5.0 10 0.3 t c = 150 c 25 c -55 c v ce = 5.0 v i c , collector current (amps) 1 00 h fe , dc current gain i c , collector current (amps) pnp npn 5 00 2 00 0.7 1000 2000 5000 10,000 0.2 15 3.0 1.0 0.5 5.0 10 0.3 7.0 25 c -55 c v ce = 5.0 v 100 500 200 0.7
mjh11017, mjh11019, mjh11021 (pnp) mjh11018, mjh11020, mjh11022 (npn) http://onsemi.com 5 voltage (volts) v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) i b , base current (ma) 1.0 1.0 2.0 5.0 3.0 2.5 4.0 3.5 3.0 10 30 4.5 2.0 50 100 i c = 15 a 20 figure 7. collector saturation region figure 8. ?on? voltages 1.5 300 500 1000 200 t j = 25 c i c = 10 a i c = 5.0 a i c , collector current (amps) 3.0 2.5 voltage (volts) 4.0 3.5 2.0 0.5 0.2 0.5 5.0 0.3 1.0 0.7 3.0 t j = 25 c v be(sat) @ i c /i b = 100 v be @ v ce = 5.0 v v ce(sat) @ i c /i b = 100 7.0 2.0 10 20 i b , base current (ma) 1.0 2.0 5.0 3.0 10 30 50 100 i c = 15 a 20 300 500 200 t j = 25 c i c = 10 a i c = 5.0 a i c , collector current (amps) 1.5 1.0 1000 pnp npn pnp npn 3.0 2.5 4.0 3.5 2.0 0.5 0.2 0.5 5.0 1.0 0.7 t j = 25 c v be(sat) @ i c /i b = 100 v be @ v ce = 5.0 v v ce(sat) @ i c /i b = 100 2.0 10 20 1.5 1.0 1.0 3.0 2.5 4.0 3.5 4.5 2.0 1.5 base emitter collector base emitter collector pnp npn figure 9. darlington schematic mjh11018 mjh11020 mjh11022 mjh11017 mjh11019 mjh11021
mjh11017, mjh11019, mjh11021 (pnp) mjh11018, mjh11020, mjh11022 (npn) http://onsemi.com 6 ordering information device order number package type shipping mjh11017 sot ? 93 30 units / rail mjh11017g sot ? 93 (pb ? free) 30 units / rail mjh11018 sot ? 93 30 units / rail mjh11018g sot ? 93 (pb ? free) 30 units / rail mjh11019 sot ? 93 30 units / rail MJH11019G sot ? 93 (pb ? free) 30 units / rail mjh11020 sot ? 93 30 units / rail mjh11020g sot ? 93 (pb ? free) 30 units / rail mjh11021 sot ? 93 30 units / rail mjh11021g sot ? 93 (pb ? free) 30 units / rail mjh11022 sot ? 93 30 units / rail mjh11022g sot ? 93 (pb ? free) 30 units / rail
mjh11017, mjh11019, mjh11021 (pnp) mjh11018, mjh11020, mjh11022 (npn) http://onsemi.com 7 package dimensions sot ? 93 (to ? 218) case 340d ? 02 issue e style 1: pin 1. base 2. collector 3. emitter 4. collector a d v g k s l u b q 123 4 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. e c j h dim min max min max inches millimeters a --- 20.35 --- 0.801 b 14.70 15.20 0.579 0.598 c 4.70 4.90 0.185 0.193 d 1.10 1.30 0.043 0.051 e 1.17 1.37 0.046 0.054 g 5.40 5.55 0.213 0.219 h 2.00 3.00 0.079 0.118 j 0.50 0.78 0.020 0.031 k 31.00 ref 1.220 ref l --- 16.20 --- 0.638 q 4.00 4.10 0.158 0.161 s 17.80 18.20 0.701 0.717 u 4.00 ref 0.157 ref v 1.75 ref 0.069 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 mjh11017/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
